DC Field | Value | Language |
---|---|---|
dc.contributor.author | 조훈영 | ko |
dc.contributor.author | 민석기 | ko |
dc.contributor.author | 이주천 | ko |
dc.date.accessioned | 2013-02-25T10:02:07Z | - |
dc.date.available | 2013-02-25T10:02:07Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1988-02 | - |
dc.identifier.citation | 새물리, v.28, no.1, pp.132 - 139 | - |
dc.identifier.issn | 0374-4914 | - |
dc.identifier.uri | http://hdl.handle.net/10203/61371 | - |
dc.language | Korean | - |
dc.publisher | 한국물리학회 | - |
dc.title | 기상 Epitaxy 에 의한 GaAs 성장및 그 특성 조사 | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 132 | - |
dc.citation.endingpage | 139 | - |
dc.citation.publicationname | 새물리 | - |
dc.contributor.nonIdAuthor | 조훈영 | - |
dc.contributor.nonIdAuthor | 민석기 | - |
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