DC Field | Value | Language |
---|---|---|
dc.contributor.author | H. Shin | ko |
dc.contributor.author | C. Hu | ko |
dc.date.accessioned | 2013-02-25T09:58:56Z | - |
dc.date.available | 2013-02-25T09:58:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1992-12 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.13, no.12, pp.600 - 602 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/61353 | - |
dc.description.abstract | The dependence of the plasma-induced oxide charging current on Al electrode geometry has been studied. The stress current is collected only through the electrode surfaces not covered by the photoresist during plasma processes, and therefore is proportional to the edge length of the electrode during etching and proportional to the electrode area during photoresist ashing. Knowing the measured oxide charging currents, one should be able to predict the impact of these processes on oxide integrity and interface stability for a given antenna geometry more accurately. | - |
dc.language | English | - |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
dc.title | Dependence of Plasma-Induced Oxide Charging Current on Al Antenna Geometry | - |
dc.type | Article | - |
dc.identifier.wosid | A1992JZ43700002 | - |
dc.identifier.scopusid | 2-s2.0-0026993978 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 600 | - |
dc.citation.endingpage | 602 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/55.192857 | - |
dc.contributor.localauthor | H. Shin | - |
dc.contributor.nonIdAuthor | C. Hu | - |
dc.type.journalArticle | Article | - |
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