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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Structural and optical characteristics of InGaN/GaN multiple quantum wells with different growth interruption Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, J; Yang, GM; Kim, CS, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.165 - 168, 2001-11 | |
| Codoping characteristics of Zn with Mg in GaN Kim, KS; Han, MS; Yang, GM; Youn, CJ; Lee, HJ; Cho, HK; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.77, no.8, pp.1123 - 1125, 2000-08 | |
| Effects of growth interruption on high indium content InGaN/GaN multi quantum wells Cheong, MG; Choi, RJ; Kim, CS; Yoon, HS; Hong, CH; Suh, EK; Lee, HJ; Cho, HK; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.38, no.6, pp.701 - 705, 2001-06 | |
| Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering Park, TE; Kong, BH; Cho, HK; Park, DJ; Lee, JeongYong, PHYSICA B-CONDENSED MATTER, v.376, pp.735 - 740, 2006-04 | |
| Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.233, no.4, pp.667 - 672, 2001-12 | |
| Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density Cho, HK; Lee, JeongYong; Choi, SC; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.222, no.1-2, pp.104 - 109, 2001-01 | |
| Structural properties of GaN grown by pendeo-epitaxy with in-doping Hong, YK; Kim, CS; Jung, HS; Hong, CH; Kim, MH; Leem, SJ; Cho, HK; Lee, JeongYong, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.235 - 238, 2001-11 | |
| Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM; Song, JH; Yu, PW, JOURNAL OF APPLIED PHYSICS, v.89, no.5, pp.2617 - 2621, 2001-03 | |
| Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Jeon, SR; Yang, GM, APPLIED PHYSICS LETTERS, v.79, no.23, pp.3788 - 3790, 2001-12 | |
| Superlattice-like stacking fault and phase separation of InxGa1-xN grown on sapphire substrate by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, APPLIED PHYSICS LETTERS, v.77, no.2, pp.247 - 249, 2000-07 |