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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Kim, MD; Seo, SY; Shin, JungHoon, JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68, 2002-05 | |
| Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Park, HL, JOURNAL OF APPLIED PHYSICS, v.90, no.8, pp.4027 - 4031, 2001-10 | |
| Microstructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, pp.115 - 118, 2002-01 | |
| Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.9, pp.5657 - 5660, 2002-05 | |
| Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD, APPLIED PHYSICS LETTERS, v.79, no.1, pp.33 - 35, 2001-07 | |
| Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD; Park, SH; Park, HL, SOLID STATE COMMUNICATIONS, v.118, no.9, pp.465 - 468, 2001-05 | |
| Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-xAs/GaAs heterostructures Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Jung, M; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5195 - 5199, 2002-04 |