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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM; Song, JH; Yu, PW, JOURNAL OF APPLIED PHYSICS, v.89, no.5, pp.2617 - 2621, 2001-03
2	Superlattice-like stacking fault and phase separation of InxGa1-xN grown on sapphire substrate by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, APPLIED PHYSICS LETTERS, v.77, no.2, pp.247 - 249, 2000-07
3	Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells Lee, WH; Kim, KS; Yang, GM; Hong, CH; Lim, KY; Suh, EK; Lee, HJ; Cho, HK; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.1, pp.136 - 140, 2001-07
4	Phase separation and stacking fault of InxGa1-xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.220, no.3, pp.197 - 203, 2000-12
5	Effect of Si, Mg, and Mg-Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, SOLID-STATE ELECTRONICS, v.45, no.12, pp.2023 - 2027, 2001-12

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