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Results 1-2 of 2 (Search time: 0.006 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

Cho, HK; Lee, JeongYong; Yang, GM; Kim, CS, APPLIED PHYSICS LETTERS, v.79, no.2, pp.215 - 217, 2001-07

2
Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, CJ; Yang, GM; Kim, CS; Song, JH; Yu, PW, APPLIED PHYSICS LETTERS, v.79, no.16, pp.2594 - 2596, 2001-10

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