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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Structural properties of GaN grown by pendeo-epitaxy with in-doping Hong, YK; Kim, CS; Jung, HS; Hong, CH; Kim, MH; Leem, SJ; Cho, HK; Lee, JeongYong, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.235 - 238, 2001-11
2	Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density Cho, HK; Lee, JeongYong; Yang, GM; Kim, CS, APPLIED PHYSICS LETTERS, v.79, no.2, pp.215 - 217, 2001-07
3	Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, CJ; Yang, GM; Kim, CS; Song, JH; Yu, PW, APPLIED PHYSICS LETTERS, v.79, no.16, pp.2594 - 2596, 2001-10
4	Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF ELECTRONIC MATERIALS, v.30, no.10, pp.1348 - 1352, 2001-10
5	Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF APPLIED PHYSICS, v.91, no.3, pp.1166 - 1170, 2002-02

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