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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD, APPLIED PHYSICS LETTERS, v.79, no.1, pp.33 - 35, 2001-07 | |
| Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD; Park, SH; Park, HL, SOLID STATE COMMUNICATIONS, v.118, no.9, pp.465 - 468, 2001-05 | |
| Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-xAs/GaAs heterostructures Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Jung, M; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5195 - 5199, 2002-04 | |
| Strain effects and atomic arrangements of 60 degrees and 90 degrees dislocations near the ZnTe/GaAs heterointerface Kim, TW; Lee, DU; Lee, HS; Lee, JeongYong; Park, HL, APPLIED PHYSICS LETTERS, v.78, no.10, pp.1409 - 1411, 2001-03 | |
| Atomic arrangements of a CuAu-I type ordered structure in strained InxGa1-xAs/InyAl1-yAs multiple quantum wells Lee, DU; Jin, JY; Yun, TY; Kim, TW; Lee, HS; Kwon, MS; Lee, JeongYong, JOURNAL OF MATERIALS SCIENCE, v.40, pp.3843 - 3846, 2005-07 | |
| Formation process and lattice parameter of InAs/GaAs quantum dots Kim, MD; Lee, HS; Lee, JeongYong; Kim, TW; Yoo, KH; Kim, GH, JOURNAL OF MATERIALS SCIENCE LETTERS, v.22, pp.1767 - 1770, 2003-12 |
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