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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Kim, MD; Seo, SY; Shin, JungHoon, JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68, 2002-05 | |
| Microstructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, pp.115 - 118, 2002-01 | |
| Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD; Park, SH; Park, HL, SOLID STATE COMMUNICATIONS, v.118, no.9, pp.465 - 468, 2001-05 |
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