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Showing results 1 to 7 of 7

1
Deposition characteristics of low dielectric constant SiOF films prepared by ECR PECVD

Byun, KM; Lee, Won-Jong, METALS AND MATERIALS-KOREA, v.6, no.2, pp.155 - 160, 2000-04

2
Effects of seed layers on the characteristics of (Pb,La)(Zr,Ti)O-3 thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition

Shin, JS; Lee, Won-Jong, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.36, no.11, pp.6909 - 6914, 1997-11

3
Microstructure and electric properties of the PZT thin films fabricated by ECR PECVD: the effects of an interfacial layer and rapid thermal annealing

Chung, Su Ock; Kim, Jae Whan; Kim, Sung Tae; Kim, Geun Hong; Lee, Won-Jong, MATERIALS CHEMISTRY AND PHYSICS, v.53, no.1, pp.60 - 66, 1998

4
Microstructure and electric properties of the PZT thin films fabricated by ECR PECVD: The effects of an interfacial layer and rapid thermal annealing

Chung, Su Ock; Kim, Jae Whan; Kim, Sung Tae; Kim, Geun Hong; Lee, Won Jong, Materials Chemistry and Physics, Vol.53, pp.60-66, 1997-04

5
Substrate effects on the epitaxial growth of AlN thin films using electron cyclotron resonance plasma enhanced chemical vapor deposition

Soh, JW; Kim, JH; Lee, Won-Jong, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.35, no.11B, pp.1518 - 1520, 1996-11

6
Substrate Effects on the Epitaxial Growth of AlN Thin Films Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Desposition

Soh, Ju-Won; Kim, Jin-Hyeok; Lee, Won-Jong, Japanese Journal of Applied Physics, Vol.35, pp.L1518-L1520, 1996-11-15

7
Water absorption characteristics of fluorinated silicon oxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition using SiH4, SiF4 and O-2

Byun, KM; Lee, Won-Jong, THIN SOLID FILMS, v.376, no.1-2, pp.26 - 31, 2000-11

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