LOW-THRESHOLD CURRENT-DENSITY INGAAS SURFACE-EMITTING LASERS WITH PERIODIC GAIN ACTIVE STRUCTURE
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | YOO, BS | ko |
| dc.contributor.author | Park, HyoHoon | ko |
| dc.contributor.author | LEE, EH | ko |
| dc.date.accessioned | 2013-02-25T07:53:38Z | - |
| dc.date.available | 2013-02-25T07:53:38Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-06 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.30, no.13, pp.1060 - 1061 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/60641 | - |
| dc.description.abstract | The authors have obtained very low threshold current densities for InGaAs vertical-cavity surface-emitting lasers using a periodic gain active structure. For a 40mum diameter device, the threshold current density for room-temperature CW operation was as low as 380A/cm2 with light output power of more than 11mW. | - |
| dc.language | English | - |
| dc.publisher | IEE-INST ELEC ENG | - |
| dc.subject | DIODES | - |
| dc.title | LOW-THRESHOLD CURRENT-DENSITY INGAAS SURFACE-EMITTING LASERS WITH PERIODIC GAIN ACTIVE STRUCTURE | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1994NW77400033 | - |
| dc.identifier.scopusid | 2-s2.0-0028449470 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 30 | - |
| dc.citation.issue | 13 | - |
| dc.citation.beginningpage | 1060 | - |
| dc.citation.endingpage | 1061 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.identifier.doi | 10.1049/el:19940719 | - |
| dc.contributor.localauthor | Park, HyoHoon | - |
| dc.contributor.nonIdAuthor | YOO, BS | - |
| dc.contributor.nonIdAuthor | LEE, EH | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | VERTICAL CAVITY SURFACE EMITTING LASERS | - |
| dc.subject.keywordAuthor | GALLIUM INDIUM ARSENIDE | - |
| dc.subject.keywordPlus | DIODES | - |
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