DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Won-Gu | ko |
dc.contributor.author | Lyu, Jong-Son | ko |
dc.contributor.author | Yoo, Hyung Joun | ko |
dc.date.accessioned | 2013-02-25T06:34:01Z | - |
dc.date.available | 2013-02-25T06:34:01Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-01 | - |
dc.identifier.citation | ETRI JOURNAL, v.17, no.4, pp.1 - 12 | - |
dc.identifier.issn | 1225-6463 | - |
dc.identifier.uri | http://hdl.handle.net/10203/60453 | - |
dc.description.abstract | A novel body-tied silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current (IDS-VDS) curves, substrate resistance effect on the IDS-VDS curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits. | - |
dc.language | English | - |
dc.publisher | ETRI | - |
dc.title | Novel body-tied silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-0029698330 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1 | - |
dc.citation.endingpage | 12 | - |
dc.citation.publicationname | ETRI JOURNAL | - |
dc.contributor.localauthor | Yoo, Hyung Joun | - |
dc.contributor.nonIdAuthor | Kang, Won-Gu | - |
dc.contributor.nonIdAuthor | Lyu, Jong-Son | - |
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