Electrical Characteristics and Thermally Induced Metastability in an Amorphous silicon Ambipolar Transistor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | J.Jang | ko |
| dc.contributor.author | H.Y. Chu | ko |
| dc.contributor.author | Choochon Lee | ko |
| dc.date.accessioned | 2013-02-25T04:05:50Z | - |
| dc.date.available | 2013-02-25T04:05:50Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989-12 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.36, no.12, pp.2928 - 2934 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/59716 | - |
| dc.language | English | - |
| dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
| dc.title | Electrical Characteristics and Thermally Induced Metastability in an Amorphous silicon Ambipolar Transistor | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1989CH52800033 | - |
| dc.identifier.scopusid | 2-s2.0-0024900874 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 36 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 2928 | - |
| dc.citation.endingpage | 2934 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.contributor.nonIdAuthor | J.Jang | - |
| dc.contributor.nonIdAuthor | H.Y. Chu | - |
| dc.type.journalArticle | Article; Proceedings Paper | - |
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