Electrical Properties of Ga-doped ZnO Films Prepared by RF sputtering

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dc.contributor.authorB.H.Choiko
dc.contributor.authorLim, Ho Binko
dc.contributor.authorJ.S.Songko
dc.date.accessioned2013-02-25T03:59:16Z-
dc.date.available2013-02-25T03:59:16Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1990-05-
dc.identifier.citationJOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.73, pp.3724-
dc.identifier.issn0002-7820-
dc.identifier.urihttp://hdl.handle.net/10203/59684-
dc.languageEnglish-
dc.publisherWiley-Blackwell-
dc.titleElectrical Properties of Ga-doped ZnO Films Prepared by RF sputtering-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume73-
dc.citation.beginningpage3724-
dc.citation.publicationnameJOURNAL OF THE AMERICAN CERAMIC SOCIETY-
dc.contributor.localauthorLim, Ho Bin-
dc.contributor.nonIdAuthorB.H.Choi-
dc.contributor.nonIdAuthorJ.S.Song-
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