Effects of Oxygen on Recrystallixation of Amorphous Silicon Films and Polysilicon TFT Characteristics

Abstract

Oxygen ions were implanted into the amorphous silicon film deposited at 540 degrees C in order to study the effects of oxygen on the solid phase crystallization of silicon films. The resulting films were investigated using transmission electron microscopy, x-ray diffraction (XRD), and also by measuring the electrical characteristics of polycrystalline silicon thin film transistors (TFTs) fabricated in the crystallized films. The development of {111} texture as a function of annealing time is similar to films implanted with Si, with higher oxygen samples showing more texture. Transmission electron microscopy shows that the grain size of completely crystallized films varies little with oxygen concentration. The electrical performances of TFTs are found to degrade with increasing oxygen dose. The trap state density increases from 5.6 x 10(12)/cm(2) to 9.5 x 10(12)/cm(2) with increasing oxygen dose. It is concluded that for a high performance TFT, oxygen incorporation in the Si film should be kept to 10(19)/cm(3) or less.