DC Field | Value | Language |
---|---|---|
dc.contributor.author | D.K.Kim | ko |
dc.contributor.author | H.C.Lee | ko |
dc.contributor.author | Lee, Jai Young | ko |
dc.date.accessioned | 2013-02-25T02:06:17Z | - |
dc.date.available | 2013-02-25T02:06:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1993 | - |
dc.identifier.citation | JOURNAL OF MATERIALS SCIENCE, v.28, no.24, pp.6704 - 6708 | - |
dc.identifier.issn | 0022-2461 | - |
dc.identifier.uri | http://hdl.handle.net/10203/58998 | - |
dc.description.abstract | Synthetic diamond particles were deposited on a Si(100) substrate using a hot-filament chemical-vapour-deposition method in order to study the effect of the reaction pressure on the nucleation behaviour. The reaction pressure was controlled, as an experimental variable, from 2 to 50 torr under the following conditions: a filament temperature of 2200-degrees-C, a substrate temperature of 850-degrees-C, a total flow rate of 200 s.c.c.m. and a methane concentration of 0.8 vol %. Diamond deposits on the Si wafer were characterized by micro- Raman spectroscopy, scanning electron microscopy (SEM) and optical microscopy. The maximum nucleation density of diamond particles on the unscratched Si substrate is shown at the reaction pressure of 5 torr. These phenomena can be explained by the competition effect between beta-SiC formation, which increases the diamond nucleation density, and atomic-hydrogen etching which decreases the nucleation sites. A new fabrication method for a high-quality diamond film without any surface pretreatments is introduced using a combination process between diamond nucleation at low pressure (5 torr) and growth at high pressure (30 torr). | - |
dc.language | English | - |
dc.publisher | CHAPMAN HALL LTD | - |
dc.subject | FILMS | - |
dc.subject | GROWTH | - |
dc.title | EFFECT OF REACTION PRESSURE ON THE NUCLEATION BEHAVIOR OF DIAMOND SYNTHESIZED BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION | - |
dc.type | Article | - |
dc.identifier.wosid | A1993MN41500030 | - |
dc.identifier.scopusid | 2-s2.0-0027848251 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 24 | - |
dc.citation.beginningpage | 6704 | - |
dc.citation.endingpage | 6708 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS SCIENCE | - |
dc.identifier.doi | 10.1007/BF00356418 | - |
dc.contributor.nonIdAuthor | D.K.Kim | - |
dc.contributor.nonIdAuthor | H.C.Lee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.