Junction properties of nip and pin amorphous Si solar cells prepared by a glow discharge in pure silane
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lim, Koeng Su | ko |
| dc.date.accessioned | 2013-02-25T01:03:30Z | - |
| dc.date.available | 2013-02-25T01:03:30Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1982-01 | - |
| dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.21, no.0, pp.219 - 224 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/58605 | - |
| dc.language | English | - |
| dc.publisher | JPS | - |
| dc.title | Junction properties of nip and pin amorphous Si solar cells prepared by a glow discharge in pure silane | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 21 | - |
| dc.citation.issue | 0 | - |
| dc.citation.beginningpage | 219 | - |
| dc.citation.endingpage | 224 | - |
| dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
| dc.contributor.localauthor | Lim, Koeng Su | - |
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