EFFECTS OF ETCH DEPTH AND ION-IMPLANTATION ON SURFACE EMITTING MICROLASERS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Yong-Hee | ko |
| dc.contributor.author | JEWELL, JL | ko |
| dc.contributor.author | TELL, B | ko |
| dc.contributor.author | BROWNGOEBELER, KF | ko |
| dc.contributor.author | SCHERER, A | ko |
| dc.contributor.author | HARBISON, JP | ko |
| dc.contributor.author | FLOREZ, LT | ko |
| dc.date.accessioned | 2013-02-25T00:44:58Z | - |
| dc.date.available | 2013-02-25T00:44:58Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990-02 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.26, no.4, pp.225 - 227 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/58493 | - |
| dc.language | English | - |
| dc.publisher | IEE-INST ELEC ENG | - |
| dc.title | EFFECTS OF ETCH DEPTH AND ION-IMPLANTATION ON SURFACE EMITTING MICROLASERS | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1990CR39800004 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 26 | - |
| dc.citation.issue | 4 | - |
| dc.citation.beginningpage | 225 | - |
| dc.citation.endingpage | 227 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.identifier.doi | 10.1049/el:19900152 | - |
| dc.contributor.localauthor | Lee, Yong-Hee | - |
| dc.contributor.nonIdAuthor | JEWELL, JL | - |
| dc.contributor.nonIdAuthor | TELL, B | - |
| dc.contributor.nonIdAuthor | BROWNGOEBELER, KF | - |
| dc.contributor.nonIdAuthor | SCHERER, A | - |
| dc.contributor.nonIdAuthor | HARBISON, JP | - |
| dc.contributor.nonIdAuthor | FLOREZ, LT | - |
| dc.type.journalArticle | Article | - |
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