Thin Oxide Charging Current During Plasma Etching of Aluminum
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | H. Shin | ko |
| dc.contributor.author | C.-C King | ko |
| dc.contributor.author | T. Horiuchi | ko |
| dc.contributor.author | C. Hu | ko |
| dc.date.accessioned | 2013-02-24T15:00:23Z | - |
| dc.date.available | 2013-02-24T15:00:23Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1991-08 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.12, no.8, pp.404 - 406 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/58068 | - |
| dc.description.abstract | CV measurement is shown to be a more sensitive technique for characterizing plasma-etching induced damage than oxide breakdown. Plasma charging current was deduced by reproducing the CV degradation by constant current stressing. The charging current is found to increase in proportion to the periphery rather than to the area of the "antenna." | - |
| dc.language | English | - |
| dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
| dc.title | Thin Oxide Charging Current During Plasma Etching of Aluminum | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1991FY52900002 | - |
| dc.identifier.scopusid | 2-s2.0-0026203864 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 12 | - |
| dc.citation.issue | 8 | - |
| dc.citation.beginningpage | 404 | - |
| dc.citation.endingpage | 406 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/55.119146 | - |
| dc.contributor.localauthor | H. Shin | - |
| dc.contributor.nonIdAuthor | C.-C King | - |
| dc.contributor.nonIdAuthor | T. Horiuchi | - |
| dc.contributor.nonIdAuthor | C. Hu | - |
| dc.type.journalArticle | Letter | - |
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