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AVALANCHE BUILDUP TIME OF INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION, GRADING, AND MULTIPLICATION REGIONS

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dc.contributor.authorJhee, Youn Kyuko
dc.contributor.authorCAMPBELL, JCko
dc.contributor.authorFERGUSON, JFko
dc.contributor.authorDENTAI, AGko
dc.contributor.authorHOLDEN, WSko
dc.date.accessioned2013-02-24T14:47:39Z-
dc.date.available2013-02-24T14:47:39Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1986-06-
dc.identifier.citationIEEE JOURNAL OF QUANTUM ELECTRONICS, v.22, no.6, pp.753 - 755-
dc.identifier.issn0018-9197-
dc.identifier.urihttp://hdl.handle.net/10203/57986-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleAVALANCHE BUILDUP TIME OF INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION, GRADING, AND MULTIPLICATION REGIONS-
dc.typeArticle-
dc.identifier.wosidA1986C713500002-
dc.type.rimsART-
dc.citation.volume22-
dc.citation.issue6-
dc.citation.beginningpage753-
dc.citation.endingpage755-
dc.citation.publicationnameIEEE JOURNAL OF QUANTUM ELECTRONICS-
dc.identifier.doi10.1109/JQE.1986.1073045-
dc.contributor.localauthorJhee, Youn Kyu-
dc.contributor.nonIdAuthorCAMPBELL, JC-
dc.contributor.nonIdAuthorFERGUSON, JF-
dc.contributor.nonIdAuthorDENTAI, AG-
dc.contributor.nonIdAuthorHOLDEN, WS-
dc.type.journalArticleLetter-
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