DC Field | Value | Language |
---|---|---|
dc.contributor.author | NAM, SH | ko |
dc.contributor.author | CHO, NH | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.date.accessioned | 2013-02-24T14:35:17Z | - |
dc.date.available | 2013-02-24T14:35:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1992-04 | - |
dc.identifier.citation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.25, no.4, pp.727 - 729 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | http://hdl.handle.net/10203/57903 | - |
dc.description.abstract | Polycrystalline SrTiO3 thin films have been prepared on Si(100) substrates by RF magnetron sputtering. The films were deposited at 400-degrees-C and were annealed at 600-degrees-C. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. From the result of the capacitance-voltage (C-V) characteristics the dielectric constant and the flat band voltage of the annealed films were measured to be 75 and -0.31 V, respectively. These oxide thin films with high dielectric constant are potentially useful in ULSI applications. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | CHARACTERIZATION OF SRTIO3 THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING | - |
dc.type | Article | - |
dc.identifier.wosid | A1992HP53300020 | - |
dc.type.rims | ART | - |
dc.citation.volume | 25 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 727 | - |
dc.citation.endingpage | 729 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.identifier.doi | 10.1088/0022-3727/25/4/020 | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | NAM, SH | - |
dc.contributor.nonIdAuthor | CHO, NH | - |
dc.type.journalArticle | Article | - |
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