DC Field | Value | Language |
---|---|---|
dc.contributor.author | NAM, SH | ko |
dc.contributor.author | LEE, WJ | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.date.accessioned | 2013-02-24T14:16:41Z | - |
dc.date.available | 2013-02-24T14:16:41Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994-04 | - |
dc.identifier.citation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.27, no.4, pp.866 - 870 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | http://hdl.handle.net/10203/57774 | - |
dc.description.abstract | Oriented SrTiO3 thin films were grown in situ on p-type Si(100) substrates by radio frequency magnetron sputtering. The orientations of the films were varied by controlling both growth temperature and oxygen-to-argon content ratio in a discharge gas. Deposition at 640-degrees-C in 100% argon discharge yielded (111)-oriented SrTiO3 film. Film with (100) orientation was obtained by addition of oxygen as a discharge gas at lower growth temperature (< 620-degrees-C). SrTiO3 thin films were composed of three regions, an external surface layer, a main layer and an interface layer. The films had very sharp interface layers. The films had a fairly dense structure with homogeneous grain and a columnar structure was observed in the cross section morphology. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | ORIENTED GROWTH OF SRTIO3 THIN-FILMS ON SI SUBSTRATE BY RADIO-FREQUENCY MAGNETRON SPUTTERING | - |
dc.type | Article | - |
dc.identifier.wosid | A1994NH07300029 | - |
dc.type.rims | ART | - |
dc.citation.volume | 27 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 866 | - |
dc.citation.endingpage | 870 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.identifier.doi | 10.1088/0022-3727/27/4/029 | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | NAM, SH | - |
dc.contributor.nonIdAuthor | LEE, WJ | - |
dc.type.journalArticle | Article | - |
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