DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ho-Gi | ko |
dc.contributor.author | LEE, WJ | ko |
dc.date.accessioned | 2013-02-24T14:14:02Z | - |
dc.date.available | 2013-02-24T14:14:02Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995 | - |
dc.identifier.citation | INTEGRATED FERROELECTRICS, v.7, no.1-4, pp.207 - 214 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | http://hdl.handle.net/10203/57757 | - |
dc.description.abstract | (Ba0.5Sr0.5)TiO3 thin films have been prepared on Pt/Ta/SiO2/Si substrates by means of a conventional rf magnetron sputtering method with ceramic target and excess BaO, SrO target under various Ar/O-2 plasma conditions. Electric properties of the films have been studied. Increase of O-2 plasma content improve dielectric and insulating properties of the films. An 80nm-BST thin film deposited with 50% O-2 plasma content has a dielectric constant of 446 and a leakage current density of 1.5x10(-7)A/cm(2) at 3V. In the current-voltage curve of BST film deposited with higher O-2 plasma content, a wider saturated region of hopping conduction appeares. | - |
dc.language | English | - |
dc.publisher | GORDON BREACH SCI PUBL LTD | - |
dc.title | OXYGEN PLASMA EFFECTS ON ELECTRICAL-PROPERTIES OF BARIUM STRONTIUM-TITANATE (BST) THIN-FILMS | - |
dc.type | Article | - |
dc.identifier.wosid | A1995QY49700019 | - |
dc.identifier.scopusid | 2-s2.0-0004452259 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 1-4 | - |
dc.citation.beginningpage | 207 | - |
dc.citation.endingpage | 214 | - |
dc.citation.publicationname | INTEGRATED FERROELECTRICS | - |
dc.identifier.doi | 10.1080/10584589508220233 | - |
dc.contributor.localauthor | Kim, Ho-Gi | - |
dc.contributor.nonIdAuthor | LEE, WJ | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.