DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHOI, CK | ko |
dc.contributor.author | YANG, SJ | ko |
dc.contributor.author | RYU, JY | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | PARK, HH | ko |
dc.contributor.author | KWON, OJ | ko |
dc.contributor.author | LEE, YP | ko |
dc.contributor.author | KIM, KH | ko |
dc.date.accessioned | 2013-02-24T13:40:50Z | - |
dc.date.available | 2013-02-24T13:40:50Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1993-07 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.63, no.4, pp.485 - 487 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/57535 | - |
dc.description.abstract | C49-TiSi2 film was grown epitaxially on Si (111) substrate by depositing Ti film on Si (111)-7x7 surface followed by in situ annealing in ultrahigh vacuum. The deposition was monitored by means of reflection high energy electron diffraction as a function of the thickness of Ti film. The best result for the growth of epitaxial C49-TiSi2 was obtained from the Ti(30 ML)/Si (111)-7x7 Si (111)-7X7 sample which was annealed at 650-degrees-C for 20 min. Images of cross-sectional high resolution transmission electron microscopy shows that the silicide/silicon interface is shown to be clear and flat. The orientation relationships are TiSi2[211BAR]\\Si[011BAR], TiSi2 (120)\\Si (111) without misorientation angle. Almost the whole area of the TiSi2 layer is revealed as an epitaxial C49 structure. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | THIN-FILMS | - |
dc.subject | SILICIDE FORMATION | - |
dc.subject | ULTRAHIGH-VACUUM | - |
dc.subject | C49 TISI2 | - |
dc.subject | C54 TISI2 | - |
dc.subject | TITANIUM | - |
dc.subject | SI | - |
dc.title | IN-SITU SOLID-PHASE EPITAXIAL-GROWTH OF C49-TISI2 ON SI(111)-7X7 SUBSTRATE | - |
dc.type | Article | - |
dc.identifier.wosid | A1993LP33000020 | - |
dc.identifier.scopusid | 2-s2.0-0000188767 | - |
dc.type.rims | ART | - |
dc.citation.volume | 63 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 485 | - |
dc.citation.endingpage | 487 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.110007 | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | CHOI, CK | - |
dc.contributor.nonIdAuthor | YANG, SJ | - |
dc.contributor.nonIdAuthor | RYU, JY | - |
dc.contributor.nonIdAuthor | PARK, HH | - |
dc.contributor.nonIdAuthor | KWON, OJ | - |
dc.contributor.nonIdAuthor | LEE, YP | - |
dc.contributor.nonIdAuthor | KIM, KH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SILICIDE FORMATION | - |
dc.subject.keywordPlus | ULTRAHIGH-VACUUM | - |
dc.subject.keywordPlus | C49 TISI2 | - |
dc.subject.keywordPlus | C54 TISI2 | - |
dc.subject.keywordPlus | TITANIUM | - |
dc.subject.keywordPlus | SI | - |
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