DC Field | Value | Language |
---|---|---|
dc.contributor.author | S.H. Nam | ko |
dc.contributor.author | Kim, Ho Gi | ko |
dc.date.accessioned | 2013-02-24T12:06:25Z | - |
dc.date.available | 2013-02-24T12:06:25Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1992-10 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.72, no.7, pp.2895 - 2899 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/57011 | - |
dc.description.abstract | Strontium titanate thin films have been prepared on p-type Si(100) substrates by radio frequency (rf) magnetron sputtering. The films were deposited at 400-degrees-C and annealed at various temperatures. The thin films were polycrystalline and the crystallinity of films was increased by annealing. The SrTiO3 thin films were composed of three regions; an external surface layer, a main layer, and an interface layer. The composition and the width of the interface layer were not changed by annealing below 600-degrees-C. The composition ratio of films, as analyzed by the Rutherford backscattering technique, was 1, 1.1, and 3 for Sr, Ti, and O, respectively. The electrical properties of SrTiO3 films were dramatically controlled by annealing. The SrTiO3 film annealed at 600-degrees-C had ideal capacitance-voltage characteristics and maximum effective dielectric constant. | - |
dc.language | English | - |
dc.publisher | Amer Inst Physics | - |
dc.title | The Effect of Heat Treatment on the SrTiO3 Thin Films Prepared by Radio Frequency Magnetron Sputtering | - |
dc.type | Article | - |
dc.identifier.wosid | A1992JT00700048 | - |
dc.identifier.scopusid | 2-s2.0-0001445807 | - |
dc.type.rims | ART | - |
dc.citation.volume | 72 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 2895 | - |
dc.citation.endingpage | 2899 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | S.H. Nam | - |
dc.type.journalArticle | Article | - |
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