동시증착에 의한 Si(111) - 7×7 기판 위에 TiSi₂ 에피택셜 성장In-situ Epitaxial Growth of the TiSi2 on Si (111)-7*7 Substrate by Codeposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최치규 | ko |
| dc.contributor.author | 류재연 | ko |
| dc.contributor.author | 오상식 | ko |
| dc.contributor.author | 염병렬 | ko |
| dc.contributor.author | 박형호 | ko |
| dc.contributor.author | 조경의 | ko |
| dc.contributor.author | 이정용 | ko |
| dc.contributor.author | 김건호 | ko |
| dc.date.accessioned | 2013-02-24T11:36:50Z | - |
| dc.date.available | 2013-02-24T11:36:50Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-12 | - |
| dc.identifier.citation | 한국진공학회지, v.3, no.4, pp.405 - 413 | - |
| dc.identifier.issn | 1225-8822 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/56865 | - |
| dc.language | Korean | - |
| dc.publisher | 한국진공학회 | - |
| dc.title | 동시증착에 의한 Si(111) - 7×7 기판 위에 TiSi₂ 에피택셜 성장 | - |
| dc.title.alternative | In-situ Epitaxial Growth of the TiSi2 on Si (111)-7*7 Substrate by Codeposition | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 3 | - |
| dc.citation.issue | 4 | - |
| dc.citation.beginningpage | 405 | - |
| dc.citation.endingpage | 413 | - |
| dc.citation.publicationname | 한국진공학회지 | - |
| dc.contributor.localauthor | 이정용 | - |
| dc.contributor.nonIdAuthor | 최치규 | - |
| dc.contributor.nonIdAuthor | 류재연 | - |
| dc.contributor.nonIdAuthor | 오상식 | - |
| dc.contributor.nonIdAuthor | 염병렬 | - |
| dc.contributor.nonIdAuthor | 박형호 | - |
| dc.contributor.nonIdAuthor | 조경의 | - |
| dc.contributor.nonIdAuthor | 김건호 | - |
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