The Deposition Rate and Properties of the Deposit in Plasma Enhanced Chemical Vapor Deposition of TiN

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dc.contributor.authorChun , Soung Soonko
dc.date.accessioned2013-02-24T10:43:04Z-
dc.date.available2013-02-24T10:43:04Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1989-01-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.7, no.1, pp.31 - 35-
dc.identifier.issn0734-2101-
dc.identifier.urihttp://hdl.handle.net/10203/56555-
dc.languageEnglish-
dc.publisherA V S Amer Inst Physics-
dc.titleThe Deposition Rate and Properties of the Deposit in Plasma Enhanced Chemical Vapor Deposition of TiN-
dc.typeArticle-
dc.identifier.wosidA1970F892500007-
dc.identifier.scopusid2-s2.0-84956039607-
dc.type.rimsART-
dc.citation.volume7-
dc.citation.issue1-
dc.citation.beginningpage31-
dc.citation.endingpage35-
dc.citation.publicationnameJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-
dc.identifier.doi10.1116/1.1315821-
dc.contributor.localauthorChun , Soung Soon-
dc.type.journalArticleArticle-
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