The Effect of the Statistical Shift on the Anomalous Conductivities of n-type Hydrogenated Amorphous Silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | B-G Yoon | ko |
| dc.contributor.author | J.Jang | ko |
| dc.contributor.author | Choochon Lee | ko |
| dc.date.accessioned | 2013-02-24T10:06:56Z | - |
| dc.date.available | 2013-02-24T10:06:56Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1986-07 | - |
| dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.60, no.2, pp.673 - 676 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/56305 | - |
| dc.language | English | - |
| dc.publisher | Amer Inst Physics | - |
| dc.title | The Effect of the Statistical Shift on the Anomalous Conductivities of n-type Hydrogenated Amorphous Silicon | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1986D194300036 | - |
| dc.identifier.scopusid | 2-s2.0-0000533750 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 60 | - |
| dc.citation.issue | 2 | - |
| dc.citation.beginningpage | 673 | - |
| dc.citation.endingpage | 676 | - |
| dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
| dc.contributor.nonIdAuthor | B-G Yoon | - |
| dc.contributor.nonIdAuthor | J.Jang | - |
| dc.type.journalArticle | Article | - |
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