DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Gyuseong | ko |
dc.contributor.author | QURESHI, S | ko |
dc.contributor.author | DREWERY, JS | ko |
dc.contributor.author | JING, T | ko |
dc.contributor.author | KAPLAN, SN | ko |
dc.contributor.author | LEE, H | ko |
dc.contributor.author | MIRESHGHI, A | ko |
dc.contributor.author | PEREZMENDEZ, V | ko |
dc.contributor.author | WILDERMUTH, D | ko |
dc.date.accessioned | 2013-02-24T09:55:10Z | - |
dc.date.available | 2013-02-24T09:55:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1992-08 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.39, no.4, pp.641 - 644 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | http://hdl.handle.net/10203/56237 | - |
dc.description.abstract | Noise of a-Si:H p-i-n diodes (5 approximately 50 mum thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor of 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise these seems to be a shaping time independent noise component at zero biased diodes. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.title | NOISE IN A-SI-H P-I-N DETECTOR DIODES | - |
dc.type | Article | - |
dc.identifier.wosid | A1992JR35300027 | - |
dc.identifier.scopusid | 2-s2.0-0026905270 | - |
dc.type.rims | ART | - |
dc.citation.volume | 39 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 641 | - |
dc.citation.endingpage | 644 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.identifier.doi | 10.1109/23.159679 | - |
dc.contributor.localauthor | Cho, Gyuseong | - |
dc.contributor.nonIdAuthor | QURESHI, S | - |
dc.contributor.nonIdAuthor | DREWERY, JS | - |
dc.contributor.nonIdAuthor | JING, T | - |
dc.contributor.nonIdAuthor | KAPLAN, SN | - |
dc.contributor.nonIdAuthor | LEE, H | - |
dc.contributor.nonIdAuthor | MIRESHGHI, A | - |
dc.contributor.nonIdAuthor | PEREZMENDEZ, V | - |
dc.contributor.nonIdAuthor | WILDERMUTH, D | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
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