A STEADY-STATE TEMPERATURE MODEL FOR SILICON RECRYSTALLIZATION USING LIGHT-SOURCES
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kyung, Chong-Min | ko |
| dc.contributor.author | YANG, YY | ko |
| dc.date.accessioned | 2013-02-24T09:08:13Z | - |
| dc.date.available | 2013-02-24T09:08:13Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1986-06 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.33, no.6, pp.864 - 865 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/55954 | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | A STEADY-STATE TEMPERATURE MODEL FOR SILICON RECRYSTALLIZATION USING LIGHT-SOURCES | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1986C325600021 | - |
| dc.identifier.scopusid | 2-s2.0-0022737426 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 33 | - |
| dc.citation.issue | 6 | - |
| dc.citation.beginningpage | 864 | - |
| dc.citation.endingpage | 865 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.contributor.localauthor | Kyung, Chong-Min | - |
| dc.contributor.nonIdAuthor | YANG, YY | - |
| dc.type.journalArticle | Note | - |
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