A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures

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dc.contributor.authorHan, Jeonghu-
dc.contributor.authorPark, Changkun-
dc.contributor.authorHong, Songcheol-
dc.date.accessioned2008-07-01T04:41:52Z-
dc.date.available2008-07-01T04:41:52Z-
dc.date.created2012-02-06-
dc.date.issued2006-07-01-
dc.identifier.citationAsia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, v., no., pp. --
dc.identifier.issn0913-5685-
dc.identifier.urihttp://hdl.handle.net/10203/5326-
dc.languageENG-
dc.language.isoen_USen
dc.publisherInstitute of Electronics, Information and Communication Engineers-
dc.titleA Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameAsia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorHan, Jeonghu-
dc.contributor.nonIdAuthorPark, Changkun-

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