ESD Characteristics of GaAs versus Silicon Diode
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Changkun | - |
| dc.contributor.author | Yun, Seok-Oh | - |
| dc.contributor.author | Han, Jeonghu | - |
| dc.contributor.author | Cheon, Sang-Hoon | - |
| dc.contributor.author | Park, Jae-Woo | - |
| dc.contributor.author | Hong, Songcheol | - |
| dc.date.accessioned | 2008-07-01T02:47:02Z | - |
| dc.date.available | 2008-07-01T02:47:02Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-10 | - |
| dc.identifier.citation | 13th Gallium Arsenide and other Compound Semiconductors Application Symposium, v., no., pp.273 - 276 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/5325 | - |
| dc.description.sponsorship | This work was supported by the University IT Research Center Project. | en |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.title | ESD Characteristics of GaAs versus Silicon Diode | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 273 | - |
| dc.citation.endingpage | 276 | - |
| dc.citation.publicationname | 13th Gallium Arsenide and other Compound Semiconductors Application Symposium | - |
| dc.identifier.conferencecountry | France | - |
| dc.identifier.conferencecountry | France | - |
| dc.contributor.localauthor | Hong, Songcheol | - |
| dc.contributor.nonIdAuthor | Park, Changkun | - |
| dc.contributor.nonIdAuthor | Yun, Seok-Oh | - |
| dc.contributor.nonIdAuthor | Han, Jeonghu | - |
| dc.contributor.nonIdAuthor | Cheon, Sang-Hoon | - |
| dc.contributor.nonIdAuthor | Park, Jae-Woo | - |
- Appears in Collection
- EE-Conference Papers(학술회의논문)
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