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Showing results 1 to 7 of 7

1
Chemical control of orbital polarization in artificially structured transition-metal oxides: La2NiXO6 (X=B, Al, Ga, In) from first principles

Han, Myung-Joon; Marianetti, C. A.; Millis, A. J., PHYSICAL REVIEW B, v.82, no.13, 2010-10

2
Covalency, double-counting, and the metal-insulator phase diagram in transition metal oxides

Wang, Xin; Han, Myung Joon; de' Medici, Luca; Park, Hyowon; Marianetti, C. A.; Millis, Andrew J., PHYSICAL REVIEW B, v.86, no.19, 2012-11

3
Formation of Dopant-Pair Defects and Doping Efficiency in B- and P-Doped Silicon Nanowires

Moon, CY; Lee, WJ; Chang, Kee-Joo, NANO LETTERS, v.8, pp.3086 - 3091, 2008-10

4
Large organic molecule chemisorption on the SiC(0001) surface

Boudrioua, O.; Yang, H.; Sonnet, Ph.; Stauffer, L.; Mayne, A. J.; Comtet, G.; Dujardin, G.; et al, PHYSICAL REVIEW B, v.85, no.3, 2012-01

5
Role of lone-pair electrons in Sb-doped amorphous InGaZnO4: Suppression of the hole-induced lattice instability

Nahm, Ho-Hyun; Kim, Yong-Sung, APPLIED PHYSICS LETTERS, v.102, no.15, 2013-04

6
Stability of Donor-Pair Defects in Si1-xGex Alloy Nanowires

Park, Ji-Sang; Ryu, Byung-Ki; Chang, Kee-Joo, JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.21, pp.10345 - 10350, 2011-06

7
Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

Nahm, Ho-Hyun; Kim, Yong-Sung, NPG ASIA MATERIALS, v.6, 2014-11

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