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Browse "Dept. of Physics(물리학과)" by Subject GALLIUM NITRIDE

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Showing results 1 to 6 of 6

1
Atomic model for blue luminescences in Mg-doped GaN

Lee, SG; Chang, Kee-Joo, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.14, no.2, pp.138 - 142, 1999-02

2
Axial Inhomogeneity of Mg-doped GaN Rods: A Strong Correlation Among Componential, Electrical, and Optical Analyses

Choi, Sunghan; Song, Hyun Gyu; Yoo, Yang-Seok; Lee, Chulwon; Woo, Kie Young; Lee, Eunhyung; Roh, Sungwon David; et al, ACS PHOTONICS, v.5, no.7, pp.2825 - 2833, 2018-07

3
Concentrations of native and Mg-related defects in GaN

Lee, SG; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.32, no.2, pp.188 - 191, 1998-02

4
Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition

Cuniot-Ponsard, M.; Saraswati, I.; Ko, Suck Min; Halbwax, M.; Cho, Yong-Hoon; Dogheche, E., APPLIED PHYSICS LETTERS, v.104, no.10, pp.101908-1 - 101908-4, 2014-03

5
Optical properties of thick-film GaN grown by hydride vapor phase epitaxy on MgAl2O4 substrate

Kim, ST; Lee, YJ; Moon, DC; Lee, C; Park, Hae-Yong, JOURNAL OF ELECTRONIC MATERIALS, v.27, no.10, pp.1112 - 1116, 1998

6
Stress relaxation in thick-film GaN grown by hydride vapor phase epitaxy on sapphire and spinel substrates as studied by photoluminescence and Raman spectroscopy

Park, Hae Yong; Kim, Jae Eun, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, no.2, pp.163 - 167, 1999-02

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