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Impact of Si impurities in HfO2: Threshold voltage problems in poly-Si/HfO2 gate stacks Kim, DY; Kang, J; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1628 - 1632, 2006-06 |
Nonlinear flexoelectricity in noncentrosymmetric crystals Chu, Kanghyun; Yang, Chan-Ho, PHYSICAL REVIEW B, v.96, no.10, pp.104102, 2017-09 |
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