Showing results 1 to 6 of 6
Atomic structure of B-P and self-interstitial-B-P complexes in Si Moon, CY; Ikini, YS; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S602 - S605, 2003-02 |
Atomic structure of B-related defects and B diffusion in Si predoped with P impurities Moon, CY; Kim, YS; Chang, Kee-Joo, PHYSICAL REVIEW B, v.69, no.8, pp.085208 - 085208, 2004-02 |
Chemical bonding and diffusion of B dopants in C-predoped Si Jwa, Sanghun; Bang, Junhyeok; Chang, Kee-Joo, PHYSICAL REVIEW B, v.80, no.7, pp.075206 - 075206, 2009-08 |
Chemical bonding effect of Ge atoms on B diffusion in Si Bang, J; Kang, J; Lee, WJ; Chang, Kee-Joo; Kim, H, PHYSICAL REVIEW B, v.76, pp.064118 - 064118, 2007-08 |
Electrically inactive nitrogen complex in Si oxynitride Lee, EC; Chang, Kee-Joo, PHYSICAL REVIEW B, v.66, pp.233205 - 233205, 2002-12 |
First-principles study of the atomic structure of B-related defects in crystalline Si predoped with phosphorus Moon, CY; Kim, YS; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.340, pp.561 - 564, 2003-12 |
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