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A selective growth of III-nitride by MOCVD for a buried-ridge type structure Yang, M; Cho, M; Kim, C; Yi, J; Jeon, J; Khym, S; Kim, M; et al, JOURNAL OF CRYSTAL GROWTH, v.226, no.1, pp.73 - 78, 2001-06 |
GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer Kim, KS; Ha, KH; Han, IY; Yang, M; Lee, Yong-Hee, ELECTRONICS LETTERS, v.36, no.3, pp.246 - 247, 2000-02 |
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