Browse "Dept. of Physics(물리학과)" by Author Lim, H
Showing results 1 to 17 of 17
| Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis Kim, IJ; Cho, Yong-Hoon; Kim, KS; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.68, no.24, pp.3488 - 3490, 1996-06 |
| Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate Cho, Yong-Hoon; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.69, no.24, pp.3740 - 3742, 1996-12 |
| Concentration dependent electron distributions in heavily Si-doped GaAs Lee, NY; Kim, Jae Eun; Park, Hae Yong; Kwak, DH; Lee, Hee Chul; Lim, H, SOLID STATE COMMUNICATIONS, v.99, no.8, pp.571 - 575, 1996-08 |
| Critical Energies of Photorefletance of Line Shape Analysis Photoluminescence of Heavily Si-Doped GaAs Lee, Hee Chul; Park, Hae Yong; Kim, Jae Eun; Lee, NY; Lee, KJ; Kwak, DH; Lim, H, International Symposium on Compound Semiconductors, pp.0 - 0, 1995-08-01 |
| Defect-related luminescence of Mg-doped n-GaN grown by hydride vapour-phase epitaxy Lee, Chul; Kim, Jae Eun; Park, Hae Yong; Kim, S T; Lim, H, JOURNAL OF PHYSICS-CONDENSED MATTER, v.10, no.48, pp.11103 - 11110, 1998-12 |
| Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface Cho, Yong-Hoon; Kim, DS; Choe, BD; Lim, H; Lee, JI; Kim, D, PHYSICAL REVIEW B, v.56, pp.R4375 - R4378, 1997 |
| Essential role of impedance in the formation of acoustic band gaps Kee, CS; Kim, Jae Eun; Park, Hae Yong; Chang, Kee-Joo; Lim, H, JOURNAL OF APPLIED PHYSICS, v.87, no.4, pp.1593 - 1596, 2000-02 |
| Heavily Si-doped GaAs Lee, Hee Chul; Kim, Jae Eun; Park, Hae Yong; Lee, NY; Lee, C; Kwak, DH; Lim, H, 제 2회 한국반도체 학술대회, pp.421 - 422, 1995 |
| High-efficiency luminescence up-conversion of infrared to red light in type-I and type-II AlxGa1-xAs/InGaP single heterostructures Cho, Yong-Hoon; Lim, H; Jhe, W, pp.955 -, 1999 |
| Interface states in In0.5Ga0.5P/AlxGa1-xAs heterostructures grown by liquid phase epitaxy Cho, Yong-Hoon; Choe, BD; Kim, Y; Lim, H, JOURNAL OF APPLIED PHYSICS, v.81, no.11, pp.7362 - 7366, 1997-06 |
| Photoluminescence Spetra of Heavily Si-Doped GaAs at Low Temperature 이희철; 박해용; 김재은; Lee, NY; Kwak, DH; Lim, H, International Symposium on Compound Semiconductor, pp.0 - 0, 1995-08-01 |
| Recombination dynamics in n-AlxGa1-xAs/n-In0.5Ga0.5P type-II heterostructures Cho, Yong-Hoon; Song, JJ; Lim, H; Choe, BD; Lee, JI; Kim, D, APPLIED PHYSICS LETTERS, v.73, no.9, pp.1245 - 1247, 1998-08 |
| Status report of the UFFO-pathfinder Huang, MHA; Park, IL; Ahmad, S; Barrillon, P; Brandt, S; Budtz-Jørgensen, C; Castro-Tirado, AJ; et al, 33rd International Cosmic Rays Conference, ICRC 2013, Sociedade Brasileira de Fisica, 2013-07 |
| The UFFO (Ultra Fast Flash Observatory) pathfinder: Science and mission Chen, P; Ahmad, S; Ahn, K; Barrillon, P; Blin-Bondil, S; Brandt, S; Budtz-Jorgensen, C; et al, 32nd International Cosmic Ray Conference, ICRC 2011, pp.243 - 246, Institute of High Energy Physics, 2011-08 |
| Tunable three-dimensional photonic crystals using semiconductors with varying free-carrier densities Ha, YK; Kim, Jae Eun; Park, Hae Yong; Kee, CS; Lim, H, PHYSICAL REVIEW B, v.66, no.7, 2002-08 |
| Two-dimensional tunable metallic photonic crystals infiltrated with liquid crystals Kee, CS; Lim, H; Ha, YK; Kim, Jae Eun; Park, Hae Yong, PHYSICAL REVIEW B, v.64, no.8, pp.085114 - 085114, 2001-08 |
| Ultra-fast flash observatory (UFFO) for observation of early photons from gamma ray bursts Park, IH; Ahmad, S; Barrillon, P; Brandt, S; Budtz-Jorgensen, C; Castro-Tirado, AJ; Chen, P; et al, 1st Leung Center for Cosmology and Particle Astrophysics Symposium, LeCosPA 2012, pp.259 - 273, World Scientific Publishing Co. Pte Ltd, 2012-02 |
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