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Effect of outermost layers on resonant cavity enhanced devices Chung, IS; Lee, YT; Kim, Jae Eun; Park, Hae Yong, JOURNAL OF APPLIED PHYSICS, v.96, no.5, pp.2423 - 2427, 2004-09 |
Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode Ryu, SP; Lee, YT; Cho, NK; Choi, WJ; Song, JD; Kwack, HS; Cho, Yong-Hoon, JOURNAL OF APPLIED PHYSICS, v.102, pp.561 - 569, 2007-07 |
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