Showing results 1 to 19 of 19
Atomic and electronic structure of crystalline InGaO3(ZnO)m Chang, Kee-Joo; Lee, W. J.; Choi, E.-A.; Kang, J.; Ryu, B., The 11th Asian Workshop on First-principles Electronic Structure Calculations, 2008-11 |
Doping induced stabilization of the cubic phase in GaN doped with transition metal ions Chang, Kee-Joo; Choi, E.-A., The 10th Asian Workshop on First-Principles Electronic Structure Calculations, 2007-10 |
Electronic properties of oxygen vacancy in HfO2 within GW calculations Chang, Kee-Joo; Choi, E.-A., 2009 March Meeting of the American Physical Society, American Physical Society, 2009-03 |
Electronic structure and defects in high-k dielectrics and oxide semiconductors Ryu, B.; Noh, H.-K.; Bang, J.; Choi, E.-A.; Lee, W.-J.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08 |
Electronic Structure and Defects in Oxide Semiconductors and Insulators Ryu, B.; Choi, E.-A.; Noh, H.-K.; Bang, J.; Lee, W.-J.; Chang, Kee-Joo, International Conference on Core Research and Engineering Science of Advanced Materials, 2010 |
Electronic structure of single crystalline InGa3(ZnO)m Chang, Kee-Joo; Lee, W.-J.; Choi, E.-A.; Kang, J.; Ryu, B., The 14th International Symposium on the Physics of Semiconductors and Applications, 2008-08 |
First-principles study of the ferromagnetism of Mn-doped ZnO nanowires Chang, Kee-Joo; Tsogbadrakh, N.; Choi, E.-A.; Lee, W.-J., 한국물리학회 가을학술논문발표회 , 한국물리학회, 2009-10 |
Issues and first-principles calculations in Si-based nanoscale devices Chang, Kee-Joo; Kang, J.; Choi, E.-A.; Kim, Y.-H., The 4th Conference of the Asian Consortium on Computational Materials Science , ACCMS-4, 2007-09 |
Magnetic properties of Mn-doped ZnO nanowires Chang, Kee-Joo; Tsogbadrakh, N.; Choi, E.-A.; Lee, W.-J., The 25th International Conference on Defects in Semiconductors, 2009-07 |
O-vacancy in amorphous indium-gallium-zinc oxide thin film transistors: origin of negative bias illumination stress instability Noh, H.-K.; Ryu, B.; Choi, E.-A.; Chang, Kee-Joo, 한국반도체학술대회, 한국반도체학회, 2011-02 |
Origin of device instability in amorphous indium-gallium-zinc oxide thin film transistors Noh, H.-K.; Ryu, B.; Choi, E.-A.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society , 2011-04 |
Role of hydrogen and O-vacancy in n-type conductivity in ZnO Chang, Kee-Joo; Bang, J.; Lee, W.-J.; Ryu, B.; Choi, E.-A., 2007 KPS Falll Meeting, KPS, 2007-10 |
Role of O-vacancy defects in devices based on high-k dielectrics and amorphous oxide semiconductors Chang, Kee-Joo; Ryu, B.; Noh, H.-K.; Choi, E.-A., 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation, ACCMS, 2011-03 |
Stability of cubic GaN doped with 3d-transition metal ions Chang, Kee-Joo; Choi, E.-A., The 3rd Electronic Structure Calculation Workshop, KIAS, 2007-06-19 |
Structure, defects, and doping in Zn-based oxide semiconductors Chang, Kee-Joo; Lee, W.-J.; Choi, E.-A.; Bang, J.; Ryu, B., 한국물리학회 봄 학술논문발표회 , 한국물리학회, 2009-04 |
The atomic and electronic structure of O-vacancy in amorphous In-Ga-Zn-O semiconductors Ryu, B.; Noh, H.-K.; Choi, E.-A.; Chang, Kee-Joo, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, 2010-11 |
The effect of Mn layer on cubic GaN growth Chang, Kee-Joo; Choi, E.-A.; Kang, J., 한국물리학회 가을학술논문발표회 , pp.457 - 457, 한국물리학회, 2005-10 |
The electronic structure of oxygen vacancy in amorphous HfSiO_4 Noh, H.-K.; Ryu, B.; Bang, J.; Chang, Kee-Joo; Choi, E.-A., 30th International Conference on the Physics of Semiconductors, 2010-07 |
The role of O-vacancy in Negative Bias Illumination Stress Instability in amoprhous In-Ga-Zn-O TFTs Ryu, B.; Noh, H.-K.; Choi, E.-A.; Chang, Kee-Joo, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2010-10 |
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