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Browse "Dept. of Physics(물리학과)" by Author Bang, J.

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Showing results 1 to 27 of 27

1	Ab initio study of boron segregation and deactivation at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08
2	Atomic and electronic structure of hydrogenated graphene and graphene nanoribbons Choe, D.-H.; Bang, J.; Chang, Kee-Joo, 한국물리학회 가을학술논문발표회, 한국물리학회, 2010-10
3	Diffusion and segregation of B dopants at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, 2010-11
4	Diffusion mechanism for B dopants in C-predoped Si Chang, Kee-Joo; Jwa, S.; Bang, J., The 11th Asian Workshop on First-principles Electronic Structure Calculations, 2008-11
5	Effects of atomic-scale defects on the electronic structure of the Dirac fermions in graphene Chang, Kee-Joo; Ryu, B.; Kang, J.; Bang, J., 한국물리학회 봄 학술논문발표회, 한국물리학회, 2008-04
6	Electronic structure and defects in high-k dielectrics and oxide semiconductors Ryu, B.; Noh, H.-K.; Bang, J.; Choi, E.-A.; Lee, W.-J.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08
7	Electronic Structure and Defects in Oxide Semiconductors and Insulators Ryu, B.; Choi, E.-A.; Noh, H.-K.; Bang, J.; Lee, W.-J.; Chang, Kee-Joo, International Conference on Core Research and Engineering Science of Advanced Materials, 2010
8	Electronic structure and localization behavior of hydrogenated graphene Bang, J.; Chang, Kee-Joo, 2010 March Meeting of the American Physical Society, American Physical Society, 2010-03
9	Electronic structure and stability of edge conformations in hydrogenated graphene nanoribbons Choe, D.-H.; Bang, J.; Chang, Kee-Joo, Dasan conference on Graphene Science and Technology, 2010-11
10	First-principles study of boron diffusion in SiGe alloys Chang, Kee-Joo; Bang, J.; Kim, H.; Kang, J.; Lee, W.-J., The 10th Asian Workshop on First-Principles Electronic Structure Calculations, 2007-10
11	First-principles study on boron segregation at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 한국물리학회 가을학술논문발표회, 한국물리학회, 2010-10
12	Identification of the 3326 cm-1 infra-red absorption line in ZnO Chang, Kee-Joo; Bang, J., 한국물리학회 가을학술논문발표회, 한국물리학회, 2008-10
13	Kinetic Monte Carlo study for the thermal stability of hydrogen in ZnO Chang, Kee-Joo; Bang, J., 2009 March Meeting of the American Physical Society, American Physical Society, 2009-03
14	Localization behavior of hydrogenated graphene and graphene nanoribbons Choe, D.-H.; Bang, J.; Chang, Kee-Joo, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, 2010-11
15	Localization induced by hydrogenation in graphene Bang, J.; Chan, K. J., The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06
16	Role of defects on direct electron tunneling through ultra-thin SiO_2 Chang, Kee-Joo; Kang, J.; Bang, J.; Kim, Y.-H., The 24th International Conference on Defects in Semiconductors, 2007-05
17	Role of hydrogen and O-vacancy in n-type conductivity in ZnO Chang, Kee-Joo; Bang, J.; Lee, W.-J.; Ryu, B.; Choi, E.-A., 2007 KPS Falll Meeting, KPS, 2007-10
18	Role of hydrogen in the n-type conductivity of ZnO Chang, Kee-Joo; Bang, J., The 14th International Symposium on the Physics of Semiconductors and Applications, 2008-08
19	Segregation of B dopants in Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06
20	Stability and segregation of boron dopants at the Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society, 2011-04
21	Stability of boron dopants at the Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ry, B.; Chang, Kee-Joo, The 18th Korean Conference on Semiconductors, KCS, 2011-02
22	Structure, defects, and doping in Zn-based oxide semiconductors Chang, Kee-Joo; Lee, W.-J.; Choi, E.-A.; Bang, J.; Ryu, B., 한국물리학회 봄 학술논문발표회 , 한국물리학회, 2009-04
23	The atomic and electronic properties of hydrogenated armchair graphene nanoribbons Choe, D.-H.; Bang, J.; Chang, Kee-Joo, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2010-04
24	The effect of isoelectronic C impurities on B diffusion in Si Chang, Kee-Joo; Jwa, S.; Bang, J., 한국물리학회 가을학술논문발표회, 한국물리학회, 2008-10
25	The electronic structure of oxygen vacancy in amorphous HfSiO_4 Noh, H.-K.; Ryu, B.; Bang, J.; Chang, Kee-Joo; Choi, E.-A., 30th International Conference on the Physics of Semiconductors, 2010-07
26	The role of hydrogen in n-type conductivity of ZnO Chang, Kee-Joo; Bang, J., The 4th KIAS Electronic Structure Calculation Workshop, KIAS, 2008-06
27	Thermal stability of hydrogen in ZnO Chang, Kee-Joo; Bang, J., The 11th Asian Workshop on First-principles Electronic Structure Calculations, 2008-11

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