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Showing results 9 to 19 of 19

9
Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst

Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin; Min, Daehong; Kim, Jaehwan; Eom, Daeyong; Yoo, Yang-Seok; et al, NANOTECHNOLOGY, v.26, no.33, pp.335601, 2015-08

10
Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates

Lee, Kyu-Seung; Isnaeni; Yoo, Yang-Seok; Lee, Jae-Hoon; Kim, Yong-Chun; Cho, Yong-Hoon, JOURNAL OF APPLIED PHYSICS, v.113, no.17, pp.173512-1 - 173512-5, 2013-05

11
Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing

Lee, Chulwon; Yoo, Yang-Seok; Ki, Bugeun; Jang, Minho; Lim, Seung-Hyuk; Song, Hyun Gyu; Cho, Jong-Hoi; et al, SCIENTIFIC REPORTS, v.9, pp.11709, 2019-08

12
(Oral) Comparative investigation of induced electroluminescence in InGaN/GaN light-emitting diodes with open- and short-circuit conditions

Cho, Yong-Hoon; Lim, Seung-Hyuk; Yoo, Yang-Seok, SPIE Photonics West 2013, SPIE Photonics West 2013, 2013-02-07

13
(Oral) Orientation-controlled Growth of Inclined GaN Nanorods on M-sapphire by Metal Organic Chemical Vapor Deposition Without Catalyst

Lee, K. S.; Cho, Yong-Hoon; Chae, S. Y.; Jang, J. J.; Min, D. H.; Kim, Je-Hyung; Yoo, Yang-Seok; et al, The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015), The 7th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2015), 2015-05-20

14
(Poster) Highly efficient phosphor-free warm white light emission based on InGaN/GaN dodecagonal ring structures

Sim, Young Chul; Cho, Yong-Hoon; Lim, Seung-Hyuk; Yoo, Yang-Seok; Jang, Minho, 12th International conference on Niride semiconductors, European materials research society, 2017-07-26

15
Real-time monitoring and visualization of the multidimensional motion of an anisotropic nanoparticle

Go, Gi Hyun; Heo, Seungjin; Cho, Jong-Hoi; Yoo, Yang-Seok; Kim, Min Kwan; Park, Chunghyun; Cho, Yong-Hoon, SCIENTIFIC REPORTS, v.7, pp.44167, 2017-03

16
Simple analysis method for determining internal quantum efficiency and relative recombination ratios in light emitting diodes

Yoo, Yang-Seok; Roh, Tae-Moo; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon, APPLIED PHYSICS LETTERS, v.102, no.21, pp.211107, 2013-05

17
Strong correlation between efficiency and carrier recombination processes in efficiency droop of GaN based light-emitting diodes

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon, 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Institute of Electrical and Electronics Engineers Inc., 2015-08

18
Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodes

Sim, Young Chul; Lim, Seung-Hyuk; Yoo, Yang-Seok; Jang, Minho; Choi, Sunghan; Yeo, Hwan-Seop; Woo, Kie Young; et al, NANOSCALE, v.10, no.10, pp.4686 - 4695, 2018-03

19
Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission

Ebaid, Mohamed; Kang, Jin-Ho; Yoo, Yang-Seok; Lim, Seung-Hyuk; Cho, Yong-Hoon; Ryu, Sang-Wan, SCIENTIFIC REPORTS, v.5, pp.17003, 2015-11

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