| 79 | GW calculations of the charge transition levels of oxygen-vacancy in HfO_2 최은애; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2009-04 |
| 80 | Hybrid functional and quasiparticle calculations of the effective work function of TiN on HfO2 오영준; 이태경; 노현균; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
| 81 | Hybrid functional calculations for the capture process of electrons by oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors 한우현; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2014-10 |
| 82 | Hydrigen Passivation of DX Centers in $Al_xGa_{1-x}$As Alloys 장기주, 1990 Seoul International Symposium in the Physics of Semiconductors and Applications, pp.349 - 353, 1990 |
| 83 | Hydrogen Bonding and Diffusion in Crystalline Semiconductors 장기주, 1991 Symposium on Theoretical Solid State Physics, 1991 |
| 84 | Hydrogen in Si and GaAs 장기주, 한국물리학회 학술발표회, pp.56 - 56, 한국물리학회, 1990 |
| 85 | Hydrogen-double accepter complexes in Si and GaAs = 실리콘 및 갈륨비소 내의 수소-이중-악셉터 복합체에 대한 연구link Lee, In-Ho; 이인호; et al, 한국과학기술원, 1992 |
| 86 | Implementation of a Conformational Space Annealing Algorithm in Computational Search for Functional Meterials 김성현; 이인호; 이주영; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04 |
| 87 | Implementation of a Conformational Space Annealing Algorithm in Computational Serach for Functional Materials 김성현; 이인호; 이주영; 오영준; 장기주, The 11th KIAS Electronic Structure Calculation Workshop, KIAS, 2015-06-18 |
| 88 | Improving p-type doping efficiency by site preference in quaternary AlInGaN alloys 박지상; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
| 89 | Li Substitution at Alkali-site of Nax[Fe0.5Mn0.5]O2 as Cathode Material for Sodium Ion Batteries 왕지은; 김도경; 한우현; 장기주; 정영화, 2018년도 한국재료학회 추계학술대회, 한국재료학회, 2018-11-08 |
| 90 | Li-assisted Na Hopping by Substitution of Li on Nax[Fe0.5Mn0.5]O2 as Cathode Material for Sodium Ion Batteries 왕지은; 정영화; 한우현; 장기주; 김도경, 2018년도 한국재료학회 춘계학술대회, 한국재료학회, 2018-05-17 |
| 91 | Local bonding effect on the acceptor level of Mg in quaternary AlInGaN alloys 박지상; 김성현; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10 |
| 92 | Localization of electronic states in hydrogenated graphene 방준혁; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2010-04 |
| 93 | Mechanism for Ferromagnetism in Diluted Magnetic Semiconductors 장기주, 고등과학원 전자구조계산 워크샵, 고등과학원, 2004-09 |
| 94 | Migration pathway and barrier for B diffusion at the interface between Si and SiO2 김근명; 오영준; 장기주, The 8th KIAS Electronic Structure Calculation Workshop, KIAS, 2012-06 |
| 95 | Migration pathway and barrier for B diffusion in defected interfaces between Si and alpha quartz SiO2 김근명; 오영준; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
| 96 | New metastable boron allotropes on the pressure-induced transition pathway from a-B to g-B 한우현; 장기주; 이인호, 13th KIAS electronic structure calculations, 고등과학원, 2017-06 |
| 97 | New topological semimetallic carbon allotrope in mixed sp2-sp3 bonding networks 성하준; 장기주; 김성현; 이인호, 13th KIAS electronic structure calculations, 고등과학원, 2017-06 |
| 98 | Nitrogen-hydrogen complexes in GaAs 김용성; 장기주, 한국물리학회 봄학술논문발표회, pp.227 - 227, 한국물리학회, 2002-04 |
| 99 | Overview of first-principles electronic structure calculations in condensed matter physics 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2011-04 |
| 100 | Phase separation and pseudogap in mixded phase manganites 이홍석; 김용현; 장기주, 한국자기학회 2001년도 추계연구발표회, pp.26 - 27, 한국자기학회, 2001 |
| 101 | Phonon-mediated excitonic excitations in solids = 포논 중개에 기인하는 엑시톤성 들뜸상태link Koo, Je-Huan; 구제환; Kim, Jong-Jean; Chang, Kee-Joo; et al, 한국과학기술원, 1994 |
| 102 | Physics and Device Applications of Semiconductor Nanostructures 장기주, 제2회 한국반도체 학술대회195, KPS, 1995-01-01 |
| 103 | Prediction of a new superconducting silicon allotrope and its chemical precursor 성하준; 장기주; 한우현; 이인호, 물리학회 2017년 가을학술논문발표회, 한국물리학회, 2017-10 |
| 104 | Pressure-induced phase transition pathway from a-boron to g-boron 한우현; 장기주; 김성현; 이인호, 2017 한국물리학회 봄학술논문발표회, 한국물리학회, 2017-04 |
| 105 | Quasiparticle energy calculations of the defect states of oxygen vacancy in HfO2 장기주; 최은애, The 5th KIAS Electronic Structure Calculation Workshop, 2009-06 |
| 106 | Quasiparticle GW calculations of the effective work function at TiN/HfO2 interface 오영준; 이태경; 노현균; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10 |
| 107 | Role of defects in device stability based on amorphous oxide semiconductors 장기주, Oxide TFT Workshop 및 TFT Stability 토론회, 2010-11 |
| 108 | Role of defects on the electronic and magnetic properties of Mn-doped GaN 장기주, 21COE Workshop in Korea, 21COE, 2007 |
| 109 | Role of oxygen vacancy in n-type conductivity in InGaO_3(ZnO)_m 장기주; 이우진; 류병기, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2009-04 |
| 110 | Scaling of conductance fluctuations in hydrogenated graphene nanoribbons 최덕현; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
| 111 | Schottky barrier height and effective work function in Ni/oxide interface: a density-functional study 노현균; 오영준; 이태경; 장기주, The 8th KIAS Electronic Structure Calculation Workshop, KIAS, 2012-06 |
| 112 | Schottky barrier height at TiN/HfO2 interface and B segregation mechanism at Si/SiO2 interface = TiN/HfO2 계면의 쇼트키 장벽과 Si/SiO2 계면의 붕소 확산 메카니즘 연구link Oh, Young Jun; 오영준; et al, 한국과학기술원, 2015 |
| 113 | Schottky barrier heights and effective work functions at various TiAlN/HfO2 interface 김근명; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04 |
| 114 | Science and Design of nano-materials and nano-devices 장기주, 컴퓨터 모델링을 이용한 재료설계 개발 심포지움, 2003-06-09 |
| 115 | Searching for the diffusion pathway of boron at Si/SiO2 interface 김근명; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2012-04-25 |
| 116 | Single parameter scaling in hydrogenated graphene and graphene nanoribbons 최덕현; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2012-10 |
| 117 | Stability and diffusion of hydrogen in Mg-doped GaN 박지상; 장기주, The 7th KIAS Electronic Structure Calculation Workshop, KIAS, 2011-06 |
| 118 | Stability and segregation of boron dopants in the interface structure between Si and amorphous SiO2 오영준; 노현균; 장기주, 한국물리학회 가을 학술논문발표회 v. no. , 한국물리학회, 2011-10 |
| 119 | Stability of B and P dopants in Si/SiO2 core-shell nanowires 김성현; 박지상; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
| 120 | Stability of boron dopants at the interface between Si and amorphous SiO2 오영준; 노현균; 장기주, The 7th KIAS Electronic Structure Calculation Workshop, KIAS, 2011-06 |
| 121 | Structural and magnetic properties of the Co atoms embedded in zigzag-shaped graphene nanoribbons 이태경; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2013-04 |
| 122 | Structural stability and electronic structure of bulk semiconductors and superlattices = 반도체 물질 및 초격자의 구조적 안정성과 전자구조에 대한 연구link Park, Chul-Hong; 박철홍; et al, 한국과학기술원, 1993 |
| 123 | Structural Stability of MgZnSSe-Alloy-Based Superlattices 장기주, 제2회 한국반도체 학술대회405, KPS, 1995-01-01 |
| 124 | Structural, electrical, and magnetic properties of Mn-doped GaN 장기주, The 3rd KIAS Workshop on Electronic Structure Calculations, KIAS, 2007-06-19 |
| 125 | The Effect of Interface Defects on the Boron Diffusion Pathway and Migration Barrier at Si/SiO2 Interface 김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10 |
| 126 | The effect of Si impurities on the Schottky barrier height and effective work function at TiN/t-HfO2 interface 김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2015-10 |
| 127 | The effects of C and F impurities on the Schottky barrier height at TiN/HfO2 interface 김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2014-10 |
| 128 | The efffect of Al impurities on the work function at metal/HfO2 interface 김근명; 오영준; 장기주, The 11th KIAS Electronic Structure Calculation Workshop, KIAS, 2015-06-18 |
| 129 | The electronic and structural properties of Si/SiO2 core-shell nanowires 김성현; 박지상; 장기주, The 8th KIAS Electronic Structure Calculation Workshop, KIAS, 2012-06 |
| 130 | The electronic and transport properties of hydrogenated graphene nanoribbons 최덕현; 장기주, The 7th KIAS Electronic Structure Calculation Workshop, KIAS, 2011-06 |
| 131 | The electronic properties of MoS2 supported on SiO2 substrate 성하준; 최덕현; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2014-04 |
| 132 | The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors 한우현; 오영준; 장기주, The 10th KIAS Electronic Structure Calculation Workshop, KIAS, 2014-06 |
| 133 | The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors 한우현; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2014-04 |
| 134 | The electronic properties of oxygen-related defects in amorphous In-Ga-Zn-O semiconductor 한우현; 오영준; 장기주, 제 10회 강유전체연합 심포지엄, 강유전체연구회, 2014-02 |
| 135 | The electronic structure of oxygen-vacancy in Si(001)/HfO_2 interface structures 장기주; 류병기, 한국물리학회 봄 학술논문발표회 , 한국물리학회, 2009-04 |
| 136 | The electronic structure of oxygen-vacancy in Si-HfO_2 interface structure 장기주; 류병기, The 5th KIAS Electronic Structure Calculation Workshop, 2009-06 |
| 137 | The electronic structure of oxygen-vacancy in ZnO/HfO2 interface structures 장기주; 류병기, 한국물리학회 가을학술논문발표회 , 한국물리학회, 2009-10 |
| 138 | The structural and electronic properties of oxidized silicon nanowires 박지상; 김성현; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2012-04-25 |
