RTP를 이용하여 열처리한 polycide 구조에서 tungsten silicide 의 전기적 특성Electrical properties of tungsten silicide in polycide structure annealed by RTP method
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 임호빈 | - |
| dc.contributor.advisor | Im, Ho-Bin | - |
| dc.contributor.author | 민병운 | - |
| dc.contributor.author | Min, Byoung-Woon | - |
| dc.date.accessioned | 2011-12-15T01:39:35Z | - |
| dc.date.available | 2011-12-15T01:39:35Z | - |
| dc.date.issued | 1990 | - |
| dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=67538&flag=dissertation | - |
| dc.identifier.uri | http://hdl.handle.net/10203/51187 | - |
| dc.description | 학위논문(석사) - 한국과학기술원 : 재료공학과, 1990.2, [ iii, 54 p. ] | - |
| dc.language | kor | - |
| dc.publisher | 한국과학기술원 | - |
| dc.subject | Capacitance-voltage measurements | - |
| dc.title | RTP를 이용하여 열처리한 polycide 구조에서 tungsten silicide 의 전기적 특성 | - |
| dc.title.alternative | Electrical properties of tungsten silicide in polycide structure annealed by RTP method | - |
| dc.type | Thesis(Master) | - |
| dc.identifier.CNRN | 67538/325007 | - |
| dc.description.department | 한국과학기술원 : 재료공학과, | - |
| dc.identifier.uid | 000881140 | - |
| dc.contributor.localauthor | 임호빈 | - |
| dc.contributor.localauthor | Im, Ho-Bin | - |
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