급속열산화법을 이용한 게이트용 산화막 성장기구에 관한 연구Kinetics of rapid thermal oxidation of silicon

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dc.contributor.advisor강상원-
dc.contributor.advisorKang, Sang-Won-
dc.contributor.author심규찬-
dc.contributor.authorShim, Kew-Chan-
dc.date.accessioned2011-12-15T01:30:02Z-
dc.date.available2011-12-15T01:30:02Z-
dc.date.issued1996-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=106615&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/50603-
dc.description학위논문(석사) - 한국과학기술원 : 재료공학과, 1996.2, [ 51 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subject급속열산화-
dc.subject성장기구-
dc.subject산화-
dc.subjectOxidation-
dc.subjectRTO-
dc.subjectKinetics-
dc.title급속열산화법을 이용한 게이트용 산화막 성장기구에 관한 연구-
dc.title.alternativeKinetics of rapid thermal oxidation of silicon-
dc.typeThesis(Master)-
dc.identifier.CNRN106615/325007-
dc.description.department한국과학기술원 : 재료공학과, -
dc.identifier.uid000943304-
dc.contributor.localauthor강상원-
dc.contributor.localauthorKang, Sang-Won-
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MS-Theses_Master(석사논문)
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