이온빔 산화와 열 산화에 의해 형성된 Si(001)-SiO$_2$계면의 구조The structure of the Si(001)-SiO$_2$ interface formed by ion beam oxidation and thermal oxidation
- Advisors
- 최시경researcher; Choi, Si-Kyoungresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1998
- Identifier
- 133521/325007 / 000925069
- Language
- kor
- Description
학위논문(박사) - 한국과학기술원 : 재료공학과, 1998.2, [ iv, 109 p. ]
- Appears in Collection
- MS-Theses_Ph.D.(박사논문)
- Files in This Item
- There are no files associated with this item.
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