학위논문(석사) - 한국과학기술원 : 원자력공학과, 1998.2, [ vii, [40] p. ]
Interfacial trap charge; Fixed oxide charge; Minority-carrier lifetime; Recombination center; Damage constant; Threshold voltage; Current gain; Electron beam; Semiconductor; PSpice simulation; PSpice 시뮬레이션; 계면 전하; 고정 산화층 전하; 소수캐리어 수명; 재결합 중심; 손상상수; 반도체; 전자빔; 전류이득; 문턱전압
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.