First-principles study of defect properties of Si impurities in $HfO_2$$HfO_2$에 Si 불순물의 결함특성에 대한 제일 원리 연구
- Advisors
- Chang, Kee-Jooresearcher; 장기주researcher
- Description
- 한국과학기술원 : 물리학과,
- Publisher
- 한국과학기술원
- Issue Date
- 2006
- Identifier
- 255223/325007 / 020043063
- Language
- eng
- Description
학위논문(석사) - 한국과학기술원 : 물리학과, 2006.2, [ iv, 22 p. ]
- Keywords
역치전압; 하프늄 옥사이드; 제일원리 연구; High-k; HfO₂; Fermi level pinning; Threshold voltages; First-principles study
- Appears in Collection
- PH-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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