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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering Ji-Hong Jhe; Shin, JungHoon; Kyung Joong Kim; Dae Won Moon, APPLIED PHYSICS LETTERS, v.82, no.25, pp.4489 - 4491, 2003-06 | |
Influence of sub-nm scale dimensional control on the Er3+ luminescence properties of Er-dopedSi/SiO2 superlattices Jhe, JH; Shin, JungHoon; Ha, YH; Moon, DW, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.176 - 180, 2001-12 |
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