파묻힌 Al-산화막을 이용한 GaAs quantum well intermixingGaAs quantum well intermixing using a buried Al-oxide layer
- Advisors
- 이용희researcher; Lee, Yong-Heeresearcher
- Description
- 한국과학기술원 : 물리학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1999
- Identifier
- 156320/325007 / 000973052
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 물리학과, 1999.2, [ ii, 35 p. ]
- Appears in Collection
- PH-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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